S25FL032P0XBHI020(Cypress Semiconductor) 描述
Additional information about the S25FL032P0XBHI020: The S25FL032P is a 3.0 V (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 64 uniform 64-KB
sectors with the two (top or bottom) 64-KB sectors further split up into thirty-two 4-KB sub sectors. The S25FL032P device is fully
backward compatible with the S25FL032A device.
The device accepts data written to Serial Input (SI) and outputs data on Serial Output (SO). The devices are designed to be
programmed in-system with the standard system 3.0-V VCC supply.
The S25FL032P device adds the following high-performance features using five new instructions:
Dual Output Read using both SI and SO pins as output pins at a clock rate of up to 80 MHz
Quad Output Read using SI, SO, W#/ACC, and HOLD# pins as output pins at a clock rate of up to 80 MHz
Dual I/O High Performance Read using both SI and SO pins as input and output pins at a clock rate of up to 80 MHz
Quad I/O High Performance Read using SI, SO, W#/ACC, and HOLD# pins as input and output pins at a clock rate of up to
Quad Page Programming using SI, SO, W#/ACC, and HOLD# pins as input pins to program data at a clock rate of up to 80 MHz
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase
and Bulk Erase commands.
Each device requires only a 3.0-V power supply (2.7 V to 3.6 V) for both read and write functions. Internally generated and regulated
voltages are provided for the program operations. This device requires a high voltage supply to the W#/ACC pin to enable the
Accelerated Programming mode.
The S25FL032P device also offers a One-Time Programmable area (OTP) of up to 128 bits (16 bytes) for permanent secure
identification and an additional 490 bytes of OTP space for other use. This OTP area can be programmed or read using the OTPP or